Enhanced Performance of N-Polar AlGaN-Based Ultraviolet Light-Emitting Diodes With Lattice- Matched AlInGaN Insertion in n-AlGaN Layer

AlGaN-based ultraviolet-A light-emitting diodes (UVA LEDs) inevitably suffer from current crowding effects at high injection levels due to their lateral device structure, resulting in non-uniform light emission and overheating. In N-polar UV LEDs, the problem is further exacerbated by increased hole efficiency, leading aggravated leakage, which limits performance. An n-AlGaN/AlInGaN/AlGaN structure adopted this study, through modulation of Al compositions AlInGaN quaternary alloy, lattice matching greater bandgap AlGaN template designed. The numerical results prove that can promote spreading thus mitigate significantly enhanced performance UVA LEDs. Furthermore, use lattice-matched layers practical epitaxy feasible, avoid defect introduction mismatch.